Basic HTML Version
PHOTOTRANSISTOR
Part Number
Lens Type
Dimensions
2.0mm x 1.25mm x 0.75mm (0805)
3.0mm x 1.0mm x 2.0mm (1104 Right Angle)
3.5mm x 2.8mm x 1.9mm
T-1 (3mm) Phototransistor
T-1 3/4 (5mm) Phototransistor
Electrical And Radiant Characteristics (Ta =25°C)
Parameter
Symbol Part Number
Min. Typ. Max. Unit
Test
Condition
Collector-to-Emitter
Breakdown Voltage V
BR CEO
-
30 -
-
V I
C
=100
m
A
Ee=0mW/cm
2
Emitter-to-Collector
Breakdown Voltage V
BR ECO
-
5 -
-
V I
E
=100
m
A
Ee=0mW/cm
2
Collector-to-Emitter
Saturation Voltage
V
CE (SAT)
-
-
-
0.8 V I
C
=2mA
Ee=20mW/cm
2
Collector Dark Current
I
CEO
-
-
- 100 nA V
CE
=10V
Ee=0mW/cm
2
Rise Time (10% to 90%) T
R
-
-
15 -
m
s
V
CE
=5V
I
C
=1mA
R
L
=1K
W
Fall Time (90% to 10%)
T
F
-
-
15 -
m
s
On State Collector
Current
I
(ON)
APT2012
Units : mm(inch)
Tolerance : ±0.1(0.004)
APA3010
Units : mm(inch)
Tolerance : ±0.15(0.006)
AA3528
Units : mm(inch)
Tolerance : ±0.25(0.01)
WP3D
WP7113
Units : mm(inch)
Tolerance : ±0.25(0.01)
Units : mm(inch)
Tolerance : ±0.25(0.01)
Absolute Maximum Rating (Ta =25°C)
Parameter
Maximum Ratings
Collector-to-Emitter Voltage
30V
Emitter-to-Collector Voltage
5V
Power Dissipation at (or below) 25°C
Free Air Temperature
100mW
Operating Temperature Range
-40°C~ +85°C
Storage Temperature Range
-40°C~ +85°C
WP3DP3BT WP7113P3BT
Lead Soldering Temperature (>5mm For 5sec)
260°C
INFRARED & PHOTOTRANSISTOR PHOTOTRANSISTOR
INFRARED & PHOTOTRANSISTOR
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